...H. A. Abdel-Aal diamond germanium metal-insulator transition photoemission silicon triboelectricity wear 12 09 2007 28 08 2009 11 11 2009 11 11 2009 The authors observed that the strength of triboemission, for diamond-Si and diamond-Ge pairs, decreased...

... and unloading curves from the indentation experiment of a gold film on the silicon substrate. Unessential coefficients of the response surface are then removed based on the test statistics. Unlike the traditional methods of identification, the tip geometry of the indenter is included because its uncertainty...

..., and hydrodynamic drag. The polishing experiments were carried out on silicon wafers with Si O 2 slurry. Cleaning experiments were performed in de-ionized water using a polyvinyl acetal brush to remove particles from a hydrophilic-silicon surface. The fluid-drag force was found to affect the lubricating behavior...

...S. Ingole; A. Schwartzman; H. Liang Investigation of abrasive wear at the nanometer-length scale is presented on single crystalline (001) and amorphous silicon. Experiments were performed using nanoindentation and nanoscratch approaches. Surface characterization was carried out using an atomic...

...Jen Fin Lin; Sheng-Chao Chen; Yu Long Ouyang; Ming Shih Tsai An average Reynolds equation considering the effects of a pad’s annular grooves and surface roughness is developed in this study to examine mixed lubrication in the chemical mechanical polishing (CMP) of a copper-film silicon wafer...

... system. Manuscript received February 24, 2004; revision received September 23, 2004. Review conducted by: T. Kato. 24 February 2004 23 September 2004 07 02 2005 silicon elemental semiconductors micromechanical devices mechanical contact adhesion stiction rough...

...Bharat Bhushan, Fellow ASME; Huiwen Liu; Stephen M. Hsu Tribological properties are crucial to the reliability of microelectromechanical systems/nanoelectromechanical systems (MEMS/NEMS). In this study, adhesion and friction measurements are made at micro and nanoscales on single-crystal silicon...

...-carbon) protective layer, the silicon underlayer and the substrate. Then, the shift was subtracted from the optical spacing to obtain the mechanical spacing. Finally, the repeatedly measured mechanical spacings were compared with the theoretically calculated spacings, showing a good accordance between...

...Jen Fin Lin, Professor; Junne Dar Chern; Yang Hui Chang; Ping Lin Kuo; Ming Shih Tsai In the chemical mechanical planarization of a copper-film silicon wafer, the average Reynolds equation with flow factors has also been developed for a cylindrical coordinate system to study the mixed lubrication...

... measurements performed on silicon and gold interfaces. Finally, the significance of the interfacial forces as relate to the reliability of MEMS interfaces is discussed. Contributed by the Tribology Division for publication in the ASME JOURNAL OF TRIBOLOGY . Manuscript received by the Tribology Division...

... experimental work on the polishing of single crystal silicon wafers with polyurethane pads and high pH slurries containing silica particles. Subambient pressures have important implications in the polishing rate and uniformity of silicon and, therefore, in the manufacture of large-scale integrated circuits...

... the typical range of normal loads and velocities used in the chemical mechanical polishing/planarization of silicon wafers. The results show that, for most cases, the leading two-thirds of the fixture exhibits a subambient pressure, and the trailing third a positive pressure. The average pressure is sub...