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Keywords: insulated gate bipolar transistors
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Journal Articles
Publisher: ASME
Article Type: Technical Briefs
J. Mech. Des. September 2011, 133(9): 094503.
Published Online: September 9, 2011
...Adrien Zéanh; Olivier Dalverny; Arezki Bouzourene; Christophe Bruzy In this paper, an Insulated Gate Bipolar Transistor (IGBT) module designed for aeronautic applications is investigated using structural reliability methods coupled with Finite Elements (FE) modeling. The lifetime of the module...