Atomic layer deposition (ALD) is a promising nanotechnology for wide applications in microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early development stage to improve its economic and environmental performance. In this paper, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of high- dielectric film through trimethylaluminum and water binary reactions. The precursor utilizations, methane emissions, and nanowaste generations from the ALD process are all quantitatively studied. Energy flow analysis demonstrates that the ALD process energy consumption is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission generations and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis.
1.
Widjaja
, Y.
, and Musgrave
, C. B.
, 2002, “Quantum Chemical Study of the Mechanism of Aluminum Oxide Atomic Layer Deposition
,” Appl. Phys. Lett.
0003-6951, 80
(18
), pp. 3304
–3306
.2.
Ott
, A. W.
, Klaus
, J. W.
, Johnson
, J. M.
, and George
, S. M.
, 1997, “Al2O3 Thin Film Growth on Si(100) Using Binary Reaction Sequence Chemistry
,” Thin Solid Films
0040-6090, 292
, pp. 135
–144
.3.
Wilk
, G. D.
, Wallace
, R. M.
, and Anthony
, J. M.
, 2001, “High-κ Gate Dielectrics: Current Status and Materials Properties Considerations
,” J. Appl. Phys.
0021-8979, 89
, pp. 5243
–5275
.4.
Puurunen
, R. L.
, 2005, “Surface Chemistry of Atomic Layer Deposition: A Case Study for the Trimethylaluminum/Water Process
,” J. Appl. Phys.
0021-8979, 97
, p. 121301
.5.
Sneh
, O.
, Clark-Phelps
, R. B.
, Londergan
, A. R.
, Winkler
, J.
, and Seidel
, T. E.
, 2002, “Thin Film Atomic Layer Deposition Equipment for Semiconductor Processing
,” Thin Solid Films
0040-6090, 402
(1–2
), pp. 248
–261
.6.
Kukli
, K.
, Ritala
, M.
, Schuisky
, M.
, Leskelä
, M.
, Sajavaara
, T.
, Keinonen
, J.
, Uustare
, T.
, and Hårsta
, A.
, 2000, “Atomic Layer Deposition of Titanium Oxide From TiI4 and H2O2
,” Chem. Vap. Deposition
0948-1907, 6
(6
), pp. 303
–310
.7.
Rossnagel
, S. M.
, Sherman
, A.
, and Turner
, F.
, 2000, “Plasma-Enhanced Atomic Layer Deposition of Ta and Ti for Interconnect Diffusion Barriers
,” J. Vac. Sci. Technol. B
1071-1023, 18
(4
), pp. 2016
–2020
.8.
Kukli
, K.
, Ritala
, M.
, Sajavaara
, T.
, Keinonen
, J.
, and Leskelä
, M.
, 2002, “Comparison of Hafnium Oxide Films Grown by Atomic Layer Deposition From Iodide and Chloride Precursors
,” Thin Solid Films
0040-6090, 416
(1–2
), pp. 72
–79
.9.
Kukli
, K.
, Forsgren
, K.
, Aarik
, J.
, Uustare
, T.
, Aidla
, A.
, Niskanen
, A.
, Ritala
, M.
, Leskela
, M.
, and Harsta
, A.
, 2001, “Atomic Layer Deposition of Zirconium Oxide From Zirconium Tetraiodide, Water and Hydrogen Peroxide
,” J. Cryst. Growth
0022-0248, 231
(1–2
), pp. 262
–272
.10.
Ye
, P. D.
, Wilk
, G. D.
, Kwo
, J.
, Yang
, B.
, Gossmann
, H. -J. L.
, Frei
, M.
, Chu
, S. N. G.
, Mannaerts
, J. P.
, Sergent
, M.
, Hong
, M.
, Ng
, K. K.
, and Bude
, J.
, 2003, “GaAs MOSFET With Oxide Gate Dielectric Grown by Atomic Layer Deposition
,” IEEE Electron Device Lett.
0741-3106, 24
(4
), pp. 209
–211
.11.
Shim
, J. H.
, Chao
, C. C.
, Huang
, H.
, and Prinz
, F. B.
, 2007, “Atomic Layer Deposition of Yttria-Stabilized Zirconia for Solid Oxide Fuel Cells
,” Chem. Mater.
0897-4756, 19
, pp. 3850
–3854
.12.
Zhang
, L.
, Jiang
, H. C.
, Liu
, C.
, Dong
, J. W.
, and Chow
, P.
, 2007, “Annealing of Al2O3 Thin Films Prepared by Atomic Layer Deposition
,” J. Phys. D
0022-3727, 40
, pp. 3707
–3713
.13.
Liu
, X.
, Ramanathan
, S.
, Lee
, E.
, and Seidel
, T. E.
, 2004, “Atomic Layer Deposition of Aluminum Nitride Thin Films from Trimethyl Aluminum (TMA) and Ammonia
,” Mater. Res. Soc. Symp. Proc.
0272-9172, 811D
, pp. D.19.1
–D.1.9.6
.14.
Ferguson
, J. D.
, Weimer
, A. W.
, and George
, S. M.
, 2000, “Atomic Layer Deposition of Ultrathin and Conformal Al2O3. Films on BN Particles
,” Thin Solid Films
0040-6090, 371
, pp. 95
–104
.15.
Ott
, A. W.
, Klaus
, J. W.
, Johnson
, J. M.
, George
, S. M.
, McCarley
, K. C.
, and Way
, J. D.
, 1997, “Modification of Porous Alumina Membranes Using Al2O3 Atomic Layer Controlled Deposition
,” Chem. Mater.
0897-4756, 9
, pp. 707
–714
.16.
Gao
, K. Y.
, Seyller
, T.
, Ley
, L.
, Ciobanu
, F.
, Pensl
, G.
, Tadich
, A.
, Riley
, J. D.
, and Leckey
, R. G. C.
, 2003, “Al2O3 Prepared by Atomic Layer Deposition as Gate Dielectric on 6H-SiC(0001)
,” Appl. Phys. Lett.
0003-6951, 83
(9
), pp. 1830
–1832
.17.
Greer
, J.
, 2003, “Preliminary Rate Equations for Al2O3 Film Growth
,” Deliverable D6.1, European Community “Information Society Technologies” Program, Report No. IST-2000-29295.18.
Kuse
, R.
, Kundu
, M.
, Yasuda
, T.
, Miyata
, N.
, and Toriumi
, A.
, 2003, “Effect of Precursor Concentration in Atomic Layer Deposition of Al2O3
,” J. Appl. Phys.
0021-8979, 94
(10
), pp. 6411
–6416
.19.
IPCC
, 2007, “Changes in Atmospheric Constituents and in Radiative Forcing
,” http://ipcc-wg1.ucar.edu/wg1/Report/AR4WG1_Print_Ch02.pdfhttp://ipcc-wg1.ucar.edu/wg1/Report/AR4WG1_Print_Ch02.pdf20.
Business Communications Co., Inc.
, “Nanomaterials Market by Type
,” Http://www.marketresearch.com/product/print/default.asp?g=1&productid=1197081Http://www.marketresearch.com/product/print/default.asp?g=1&productid=119708121.
Business Communications Co, Inc.
, “Evolving Dielectrics in Semiconductor Devices
,” http://www.altfuels.com/report/SMC040B.htmlhttp://www.altfuels.com/report/SMC040B.html22.
Li
, M. Y.
, Chang
, Y. Y.
, Wu
, H. C.
, Huang
, C. S.
, Chen
, J. C.
, Lue
, J. L.
, and Chang
, S. M.
, 2007, “Effect of Process Pressure on Atomic Layer Deposition of Al2O3
,” J. Electrochem. Soc.
0013-4651, 154
(11
), pp. H967
–H972
.23.
Matero
, R.
, Rahtu
, A.
, Ritala
, M.
, Leskela
, M.
, and Sajavaara
, T.
, 2000, “Effect of Water Dose on the Atomic Layer Deposition Rate of Oxide Thin Films
,” Thin Solid Films
0040-6090, 368
, pp. 1
–7
.24.
Lamparter
, P.
, and Kniep
, R.
, 1997, “Structure of Amorphous Al2O3
,” Physica B
0921-4526, 405
, pp. 234
–236
.25.
Adiga
, S. P.
, Zapol
, P.
, and Curtiss
, L. A.
, 2006, “Atomistic Simulations of Nanoporous Anodic Aluminum Oxide
,” Mater. Res. Soc. Symp. Proc.
0272-9172, 900E
, p. 0900
-O12-17.1
.26.
Joly
, J. P.
, Gaillard
, F.
, Peillex
, E.
, and Romand
, M.
, 2000, “Temperature-Programmed Desorption (TPD) of Water From Iron, Chromium, Nickel and 304L Stainless Steel
,” Vacuum
0042-207X, 59
, pp. 854
–867
.27.
Yuan
, Y.
, 2009, “A System Approach for Reducing the Environmental Impact of Manufacturing and Sustainability Improvement of Nano-Scale Manufacturing
,” Ph.D. thesis, University of California, Berkeley, Berkeley, CA.28.
Groner
, M. D.
, Elam
, J. W.
, Fabreguette
, F. H.
, and George
, S. M.
, 2002, “Electrical Characterization of Thin Al2O3 Films Grown by Atomic Layer Deposition on Silicon and Various Metal Substrates
,” Thin Solid Films
0040-6090, 413
, pp. 186
–197
.29.
Yun
, S. J.
, Lee
, K. H.
, Skarp
, J.
, Kim
, H. R.
, and Nam
, K. S.
, 1997, “Dependence of Atomic Layer-Deposited Al2O3 Films Characteristics on Growth Temperature and Al Precursors of Al(CH3)3 and AlCl3
,” J. Vac. Sci. Technol. A
0734-2101, 15
, pp. 2993
–2997
.30.
Groner
, M. D.
, Fabreguette
, F. H.
, Elam
, J. W.
, and George
, S. M.
, 2004, “Low Temperature Al2O3 Atomic Layer Deposition
,” Chem. Mater.
0897-4756, 16
, pp. 639
–645
.31.
Lee
, Y. J.
, and Kang
, S. W.
, 2002, “Atomic Layer Deposition of Aluminum Thin Films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma
,” Electrochem. Solid-State Lett.
1099-0062, 5
(10
), pp. C91
–C93
.32.
Yuan
, C. Y.
, and Dornfeld
, D. A.
, 2008, “Environmental Performance Characterization of Atomic Layer Deposition
,” Proceedings of the IEEE International Symposium on Electronics and the Environment
.Copyright © 2010
by American Society of Mechanical Engineers
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