In the push to faster speed, lower power consumption, and reduced crosstalk, the conventional dielectric material SiO is going to be replaced by the materials with low dielectric constants. Although the current design that uses Cu and SiO dielectric material has achieved good reliability in wire bonding and flip-chip packages, whether or not the Cu-low k design can have the same reliability in these packages is unknown. Also, with decreasing dimensions and increasing complexity, thermal strains due to the mismatch of coefficients of thermal expansion are localized in very tiny zones with high magnitudes. Therefore, it is essential to find an experimental way to ensure interconnect layers to achieve required reliability. SIEM (Speckle Interferometry with Electron Microscopy) is a micro-mechanics measurement technique that has a spatial resolution approaching a few nanometers. It is able to perform the full field displacement mapping over a region of only several microns in diameter. The purpose of this paper is to demonstrate the capability of SIEM, which can perform a direct and in-situ measurement of local deformation fields of interconnection layers of an electronic chip.

1.
Suresh
,
S.
,
Giannakopoulos
,
A. E.
, and
Olsson
,
M.
,
1994
, “
Elastoplastic Analysis of Thermal Cycling Layered Materials with Sharp Interfaces
,”
J. Mech. Phys. Solids
,
42
(
6
), pp.
979
1018
.
2.
Huang
,
Y.
,
Hu
,
K. X.
,
Yeh
,
C. P.
,
Li
,
N-Y.
, and
Huang
,
K. C.
,
1996
, “
A Model Study of Thermal Stress-Induced Voiding in Electronic Packages
,”
ASME J. Electron. Packag.
,
118
, pp.
229
234
.
3.
Han
,
B.
,
Guo
,
Y.
,
Lim
,
C. K.
, and
Galetka
,
D.
,
1996
, “
Verification of Numerical Models Used in Microelectronics Packaging Design by Interferometric Displacement Measurement Methods
,”
ASME J. Electron. Packag.
,
118
, pp.
157
163
.
4.
Liu
,
S.
,
Zhu
,
J.
,
Zou
,
D.
, and
Benson
,
J.
,
1997
, “
Study of Delaminated Plastic Packages by High Temperature Moire and Finite Element Methods
,”
IEEE Trans. Compon., Packag. Manuf. Technol., Part A
,
20
(
4
), pp.
505
512
.
5.
Wang
,
J.
,
Qian
,
Z.
, and
Liu
,
S.
,
1998
, “
Process Induced Stresses of a Flip-Chip Packaging by Sequential Processing Modeling Technique
,”
ASME J. Electron. Packag.
,
120
, pp.
309
313
.
6.
Shen
,
Y-L.
,
1999
, “
Void Nucleation in Metal Interconnects: Combined Effects of Interface Flaws and Crystallographic Slip
,”
J. Mater. Res.
,
14
(
2
), pp.
584
591
.
7.
Guo
,
Y.
, and
Liu
,
S.
,
1998
, “
Development in Optical Methods for Reliability Analysis in Electronic Packaging Applications
,”
ASME J. Electron. Packag.
,
120
, pp.
186
193
.
8.
Han
,
B.
,
1998
, “
Recent Advancement of moire´ and Microscopic moire´ Interferometry for Thermal Deformation Analyses of Microelectronic Devices
,”
Exp. Mech.
,
38
(
4
), pp.
273
288
.
9.
Chiang, F. P., Wang, Q., and Lehman, F., 1997, “New Developments in Full Field Strain Measurements Using Speckles,” Nontraditional Methods of Sensing Stress, Strain and Damage in Materials and Structures, ASTM STP 1318, George F. Lucas and David A. Stubbs, Eds., American Society for Testing and Materials, pp. 156–169.
10.
Chen
,
D. J.
,
Chiang
,
F. P.
,
Tan
,
Y. S.
, and
Don
,
H. S.
,
1993
, “
Digital Speckle-Displacement Measurement Using a Complex Spectrum Method
,”
Appl. Opt.
,
32
(
11
), pp.
1839
1849
.
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